The full form of PECVD is Plasma-Enhanced Chemical Vapor Deposition.
PECVD is a widely used process in the semiconductor industry and other fields for depositing thin films onto substrates. The technique employs plasma to enhance the chemical reactions involved in vapor deposition, which allows for deposition at lower temperatures compared to traditional CVD methods. This is particularly important when dealing with substrates that are sensitive to high temperatures.
Here's a breakdown of the term:
- Plasma-Enhanced: This indicates that a plasma is used to facilitate the chemical reactions. The plasma contains energetic species (ions, electrons, radicals) that break down precursor gases and promote film growth.
- Chemical Vapor Deposition: This refers to the process where gaseous precursors react chemically on the surface of a substrate to form a solid thin film.
In summary, PECVD is a versatile technique that leverages plasma energy to deposit thin films with controlled properties at relatively low temperatures.
