A buried oxide layer is an insulating layer, often made of silicon dioxide (SiO2), positioned beneath a thin layer of silicon where transistors are built.
Based on the provided reference, a buried oxide layer serves a crucial function in certain semiconductor structures:
Understanding Buried Oxide
According to the reference:
- It is a thin layer of insulator, specifically identified as silicon dioxide (SiO2).
- It is also known as a buried oxide layer.
- This layer is placed upon the substrate.
- A thin layer of silicon is then placed on top of this insulator.
- The primary purpose is to isolate the body (referring to the thin silicon layer) from the substrate.
- Transistors are subsequently built upon this thin silicon layer, which sits above the buried oxide.
Key Characteristics
Here are the essential points about buried oxide derived from the reference:
- Material: Typically silicon dioxide (SiO2).
- Location: Lies upon the substrate, underneath a thin silicon layer.
- Function: Provides isolation, separating the thin silicon layer (where devices are built) from the underlying substrate.
- Structure Role: It is part of a layered structure where transistors are built on the silicon layer above it.
This insulating layer helps prevent electrical current leakage between the active silicon region and the substrate, which is fundamental for the performance and efficiency of the devices built on the silicon layer above the buried oxide.
